BC856T SERIES
BC857T SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856T and
BC857T Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-523 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC857T
50
45
BC856T
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
5.0
100
200
100
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BC857T)
BVCBO
IC=10μA (BC856T)
BVCEO
IC=10mA (BC857T)
BVCEO
IC=10mA (BC856T)
BVEBO
IE=10μA
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
Cc
VCB=10V, IE=0, f=1.0MHz
Ce
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted)
MIN
TYP
MAX
15
5.0
100
50
80
45
65
5.0
0.20
0.40
0.70
0.77
2.5
10
10
BC856BT
BC857BT
MIN
MAX
220
475
0.58
100
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
hFE
VCE=5.0V, IC=2.0mA
BC856AT
BC857AT
MIN
MAX
125
250
BC857CT
MIN
MAX
420
800
R1 (20-November 2009)
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