BC857AT datasheet, PDF - EEWORLD Datasheet

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BC857AT: DescriptionPNP general purpose transistors; CategoryDiscrete semiconductor The transistor; File Size342KB，2 Pages; ManufacturerCentral Semiconductor

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BC857AT Overview

PNP general purpose transistors

BC857AT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	125
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC856T SERIES

BC857T SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856T and

BC857T Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-523 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BC857T

BC856T

UNITS

°C

°C/W

5.0

100

200

100

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

ICBO

VCB=30V

ICBO

VCB=30V, TA=150°C

IEBO

VEB=5.0V

BVCBO

IC=10μA (BC857T)

BVCBO

IC=10μA (BC856T)

BVCEO

IC=10mA (BC857T)

BVCEO

IC=10mA (BC856T)

BVEBO

IE=10μA

VCE(SAT)

IC=10mA, IB=0.5mA

VCE(SAT)

IC=100mA, IB=5.0mA

VBE(ON)

IC=2.0mA, VCE=5.0V

VBE(ON)

IC=10mA, VCE=5.0V

VCE=5.0V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

otherwise noted)

MIN

TYP

MAX

5.0

100

5.0

0.20

0.40

0.70

0.77

2.5

BC856BT

BC857BT

MIN

MAX

220

475

0.58

100

UNITS

μA

MHz

hFE

VCE=5.0V, IC=2.0mA

BC856AT

BC857AT

MIN

MAX

125

250

BC857CT

MIN

MAX

420

800

R1 (20-November 2009)

BC857AT Related Products

	BC857AT	BC856AT	BC856BT	BC856T	BC857CT
Description	PNP general purpose transistors	PNP general purpose transistors	PNP general purpose transistors	PNP general purpose transistors	PNP general purpose transistors
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	-	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3	-	3
Reach Compliance Code	_compli	_compli	_compli	-	_compli
ECCN code	EAR99	EAR99	EAR99	-	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	-	0.1 A
Collector-emitter maximum voltage	45 V	65 V	65 V	-	45 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	125	125	220	-	420
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	-	R-PDSO-F3
JESD-609 code	e0	e0	e0	-	e0
Number of components	1	1	1	-	1
Number of terminals	3	3	3	-	3
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	-	PNP
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	-	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
surface mount	YES	YES	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	FLAT	FLAT	FLAT	-	FLAT
Terminal location	DUAL	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	-	100 MHz
Maker	-	Central Semiconductor	Central Semiconductor	-	Central Semiconductor

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