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MJE13009_15

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size453KB,9 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

MJE13009_15 Overview

POWER TRANSISTOR

MJE13009_15 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
UNISONIC TECHNOLOGIES CO., LTD
MJE13009
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The
MJE13009
is designed for high-voltage, high-speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220V switch mode applications such
as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
NPN SILICON TRANSISTOR
FEATURES
* V
CEO
400V and 300 V
* Reverse Bias SOA with Inductive Loads @ T
C
= 100℃
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃
t
C
@ 8 A, 100
is 120 ns (Typ).
* 700 V Blocking Capability
* SOA and Switching Applications Information.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-TA3-T
MJE13009G-TA3-T
MJE13009L-TF3-T
MJE13009G-TF3-T
MJE13009L-T3P-T
MJE13009G-T3P-T
Package
TO-220
TO-220F
TO-3P
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 9
QW-R203-024,F

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