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10RIF10W10

Description
Silicon Controlled Rectifier, 10000mA I(T), 100V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size683KB,15 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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10RIF10W10 Overview

Silicon Controlled Rectifier, 10000mA I(T), 100V V(DRM)

10RIF10W10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2 V
Maximum holding current100 mA
Maximum leakage current10 mA
On-state non-repetitive peak current105 A
Maximum on-state current10000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage100 V
surface mountNO
Trigger device typeSCR

10RIF10W10 Related Products

10RIF10W10 10RIF60W10
Description Silicon Controlled Rectifier, 10000mA I(T), 100V V(DRM) Silicon Controlled Rectifier, 10000mA I(T), 600V V(DRM)
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Critical rise rate of minimum off-state voltage 500 V/us 500 V/us
Maximum DC gate trigger current 60 mA 60 mA
Maximum DC gate trigger voltage 2 V 2 V
Maximum holding current 100 mA 100 mA
Maximum leakage current 10 mA 10 mA
On-state non-repetitive peak current 105 A 105 A
Maximum on-state current 10000 A 10000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Off-state repetitive peak voltage 100 V 600 V
surface mount NO NO
Trigger device type SCR SCR
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