BD316 datasheet, PDF - EEWORLD Datasheet

BD316: Description16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size112KB，3 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BD316 Overview

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	16 A
Configuration	Single
Minimum DC current gain (hFE)	25
JESD-609 code	e0
Maximum operating temperature	175 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	200 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	1 MHz

	BD316	BD315	BD318
Description	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	16 A	16 A	16 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	25	25	25
JESD-609 code	e0	e0	e0
Maximum operating temperature	175 °C	175 °C	200 °C
Polarity/channel type	PNP	NPN	PNP
Maximum power dissipation(Abs)	200 W	200 W	200 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	1 MHz	1 MHz	1 MHz

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