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BD318

Description
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BD318 Overview

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

BD318 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)16 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)1 MHz

BD318 Related Products

BD318 BD315 BD316
Description 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Is it Rohs certified? incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 16 A 16 A 16 A
Configuration Single Single Single
Minimum DC current gain (hFE) 25 25 25
JESD-609 code e0 e0 e0
Maximum operating temperature 200 °C 175 °C 175 °C
Polarity/channel type PNP NPN PNP
Maximum power dissipation(Abs) 200 W 200 W 200 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 1 MHz 1 MHz 1 MHz
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