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BD315

Description
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BD315 Overview

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

BD315 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)16 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)1 MHz

BD315 Related Products

BD315 BD316 BD318
Description 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Is it Rohs certified? incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 16 A 16 A 16 A
Configuration Single Single Single
Minimum DC current gain (hFE) 25 25 25
JESD-609 code e0 e0 e0
Maximum operating temperature 175 °C 175 °C 200 °C
Polarity/channel type NPN PNP PNP
Maximum power dissipation(Abs) 200 W 200 W 200 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 1 MHz 1 MHz 1 MHz

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