SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT758
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T758
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
-400
-400
-5
-1
-0.5
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 354
ZDT758
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
MIN.
-400
-400
-5
-100
-100
-100
-0.30
-0.25
-0.50
-0.9
-0.9
50
50
40
50
20
140
2000
MHz
pF
ns
ns
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
I
C
=-20mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-100mA, V
C
=-100V
I
B1
=10mA, I
B2
=-20mA
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
Switching times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 355
MCU
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