2N3636L datasheet, PDF - EEWORLD Datasheet

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2N3636L: Description1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5; CategoryDiscrete semiconductor The transistor; File Size73KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N3636L Overview

1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

2N3636L Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	175 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

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2N3634, 2N3634L, 2N3635,

2N3635L, 2N3636,

2N3636L, 2N3637, 2N3637L

Low Power Transistors

PNP Silicon

http://onsemi.com

Features

COLLECTOR

BASE

Unit

Vdc

Adc

°C

TO−5

CASE 205AA

STYLE 1

2N3634L

2N3635L

2N3636L

2N3637L

EMITTER

•

MIL−PRF−19500/357 Qualified

•

Available as JAN, JANTX, JANTXV and JANHC

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Characteristic

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current

− Continuous

Total Device Dissipation

@ T

= 25°C

Total Device Dissipation

@ T

= 25°C

Operating and Storage Junc-

tion Temperature Range

Symbol

CEO

CBO

EBO

, T

stg

2N3634/L

2N3635/L

−140

−5.0

1.0

5.0

−65 to +200

2N3636/L

2N3637/L

−175

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

qJA

qJC

Max

175

Unit

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

Level

Device

2N3634

2N3635

2N3636

JAN

JANTX

JANTXV

JANHC

2N3637

2N3634L

2N3635L

2N3636L

2N3637L

TO−5

Bulk

TO−39

Bulk

Package

Shipping

TO−39

CASE 205AB

STYLE 1

2N3634

2N3635

2N3636

2N3637

Semiconductor Components Industries, LLC, 2013

November, 2013 − Rev. 1

Publication Order Number:

2N3637/D

2N3636L Related Products

	2N3636L	2N3634	2N3634L	2N3635	2N3635L	2N3636	2N3637	2N3637L
Description	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5	1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-	CASE 205AA, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknow	unknow	-	unknown	unknow	compli	unknow
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	-	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	175 V	140 V	140 V	-	140 V	175 V	175 V	175 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	-	60	30	60	60
JEDEC-95 code	TO-5	TO-39	TO-5	-	TO-5	TO-39	TO-39	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	-	1	1	1	1
Number of terminals	3	3	3	-	3	3	3	3
Package body material	METAL	METAL	METAL	-	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	-	PNP	PNP	PNP	PNP
surface mount	NO	NO	NO	-	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	600 ns	600 ns	600 ns	-	600 ns	600 ns	600 ns	600 ns
Maximum opening time (tons)	200 ns	200 ns	200 ns	-	200 ns	200 ns	200 ns	200 ns
Base Number Matches	1	1	1	-	-	1	1	1

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