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2N3635L

Description
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size73KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N3635L Overview

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2N3635L Parametric

Parameter NameAttribute value
Objectid1274610388
package instructionCASE 205AA, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)1 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Maximum off time (toff)600 ns
Maximum opening time (tons)200 ns
2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
http://onsemi.com
Features
COLLECTOR
3
2
BASE
Unit
Vdc
Vdc
Vdc
Adc
W
W
°C
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
1
EMITTER
MIL−PRF−19500/357 Qualified
Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current
− Continuous
Total Device Dissipation
@ T
A
= 25°C
Total Device Dissipation
@ T
C
= 25°C
Operating and Storage Junc-
tion Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
2N3634/L
2N3635/L
−140
−140
−5.0
1.0
1.0
5.0
−65 to +200
2N3636/L
2N3637/L
−175
−175
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
175
35
Unit
°C/W
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Level
Device
2N3634
2N3635
2N3636
JAN
JANTX
JANTXV
JANHC
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
TO−5
Bulk
TO−39
Bulk
Package
Shipping
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
©
Semiconductor Components Industries, LLC, 2013
1
November, 2013 − Rev. 1
Publication Order Number:
2N3637/D

2N3635L Related Products

2N3635L 2N3634 2N3634L 2N3635 2N3636 2N3636L 2N3637 2N3637L
Description TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
package instruction CASE 205AA, 3 PIN CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknow unknow - unknow unknow compli unknow
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A - 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 140 V 140 V 140 V - 175 V 175 V 175 V 175 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 30 30 - 30 30 60 60
JEDEC-95 code TO-5 TO-39 TO-5 - TO-39 TO-5 TO-39 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 - 1 1 1 1
Number of terminals 3 3 3 - 3 3 3 3
Package body material METAL METAL METAL - METAL METAL METAL METAL
Package shape ROUND ROUND ROUND - ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP - PNP PNP PNP PNP
surface mount NO NO NO - NO NO NO NO
Terminal form WIRE WIRE WIRE - WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON SILICON
Maximum off time (toff) 600 ns 600 ns 600 ns - 600 ns 600 ns 600 ns 600 ns
Maximum opening time (tons) 200 ns 200 ns 200 ns - 200 ns 200 ns 200 ns 200 ns
Base Number Matches - 1 1 - 1 1 1 1
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