Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
• Synchronous Rectification
• POL, IBC
- Secondary Side
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
L = 0.1 mH
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
Limit
40
± 20
19
15
12.4
a, b
9.9
a, b
50
15
11
5
2.1
a, b
6
3.8
2.5
a, b
1.6
a, b
- 55 to 150
Unit
V
A
mJ
A
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
37
17
Maximum
50
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is
85
°C/W.
d. Based on T
C
= 25 °C.
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
1
Si4840BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
=
0 V
0.8
30
26
17.5
12.5
T
C
= 25 °C
30
50
1.2
60
52
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 12.4 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12.4 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
2000
260
150
33
15
6.7
5.1
1.4
25
12
25
10
10
15
30
10
2.1
40
20
40
15
15
25
45
15
ns
Ω
50
23
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 12.4 A
V
GS
=
4.5 V, I
D
= 10.8 A
V
DS
= 15 V, I
D
= 12.4 A
50
0.0074
0.0095
56
0.009
0.012
1
40
40
-6
3
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10
V
thru 4
V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
6
T
C
= 25 °C
4
20
3
V
10
2
V
0
0
0.4
0.8
1.2
1.6
2.0
2
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.012
2400
Transfer Characteristics
2000
R
DS(on)
- On-Resistance (Ω)
0.010
C - Capacitance (pF)
V
GS
= 4.5
V
C
iss
1600
0.008
V
GS
= 10
V
0.006
1200
800
C
oss
400
C
rss
0.004
0
10
20
30
40
50
0
0
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 20 V
I
D
= 12.4 A
R
DS(on)
- On-Resistance
(Normalized)
1.8
V
GS
= 10 V
I
D
= 12.4 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
35
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
3
Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
0.030
I
D
= 12.4 A
0.025
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
0.020
125 °C
0.015
0.010
25 °C
0.005
T
J
= 25 °C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
V
GS(th)
(V)
1.8
1.6
1.4
10
1.2
1.0
- 50
Power (W)
30
I
D
= 250
µA
40
50
On-Resistance vs. Gate-to-Source Voltage
20
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power (Junction-to-Ambient)
Limited
by
R
DS(on)
*
100
µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
1s
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
6
20
I
D
- Drain Current (A)
Power Dissipation (W)
5
4
15
3
10
2
5
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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