UNISONIC TECHNOLOGIES CO., LTD
7NM70
7A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UTC 7NM70
is a high voltage super junction MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 1.2Ω @ V
GS
= 10V, I
D
= 3.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
RDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S2
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
7NM70L-TA3-T
7NM70G-TA3-T
7NM70L-TF3-T
7NM70G-TF3-T
7NM70L-TF1-T
7NM70G-TF1-T
7NM70L-TF2-T
7NM70G-TF2-T
7NM70L-TF3T-T
7NM70G-TF3T-T
7NM70L-TM3-T
7NM70G-TM3-T
7NM70L-TMS2-T
7NM70G-TMS2-T
7NM70L-TN3-R
7NM70G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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1 of 7
QW-R205-047.B
7NM70
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-047.B
7NM70
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
T
C
= 25°C
7.0
A
Continuous Drain Current
I
D
T
C
= 100°C
4.7
A
Drain Current Pulsed (Note 2)
I
DM
28
A
Avalanche Energy, Single Pulsed (Note 3)
E
AS
40
mJ
Avalanche Energy, Repetitive, Limited by T
JMAX
E
AR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.2
V/ns
TO-220
142
W
TO-220F/TO-220F1
48
W
Power Dissipation
TO-220F3
P
D
(T
C
= 25°C)
TO-220F2
50
W
TO-251/TO-251S2
60
W
TO-252
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=20mH, I
AS
=2A, V
DD
=50V, R
G
=0
Ω,
Starting T
J
=25°C
4. I
SD
≤
7.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
0.88
2.6
θ
JC
2.5
2.08
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S2
TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S2
TO-252
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QW-R205-047.B
7NM70
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN
700
TYP MAX UNIT
V
μA
μA
nA
nA
V/°C
4.0
1.2
340
120
6.5
19
5
5.2
50
70
140
65
1.4
7.0
28
317
3.03
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 700V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 560V, T
C
= 125°C
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
I
D
= 250mA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Drain-Source ON-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
= 50V, V
GS
= 10V
I
D
= 1.3A, , I
G
=100μA
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
DD
Turn-on Delay Time
t
D(ON)
V
DD
= 30V, V
GS
= 10V
Turn-on Rise Time
t
R
I
D
= 0.5A, R
G
= 25Ω
Turn-off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-off Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
=7.0A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 7.0A,
dI
F
/dt = 100 A/μs
Reverse Recovery Charge (Note 1)
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
1
1
100
-100
0.67
2.0
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QW-R205-047.B
7NM70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-047.B
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