UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2N50K-TA
2A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N50K-TA
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
2N50K-TA
is generally applied in high efficiency
switch mode power supplies, active power factor correction and
electronic lamp ballasts based on half bridge topology.
FEATURES
* R
DS(ON)
< 4.9Ω @ V
GS
=10V, I
D
=1A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
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QW-R205-031.A
2N50K-TA
ORDERING INFORMATION
Ordering Number
Lead Free
2N50KL-TA3-T
2N50KL-TF3-T
2N50KL-TF1-T
2N50KL-TF2-T
2N50KL-TF3T-T
2N50KL-TM3-T
2N50KL-TMS-T
2N50KL-TN3-R
2N50KL-TND-R
Pin Assignment: G: Gate
2N50KL-TA3-T
(1)Packing Type
Preliminary
Power MOSFET
Note:
Halogen Free
2N50KG-TA3-T
2N50KG-TF3-T
2N50KG-TF1-T
2N50KG-TF2-T
2N50KG-TF3T-T
2N50KG-TM3-T
2N50KG-TMS-T
2N50KG-TN3-R
2N50KG-TND-R
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TN3: TO-252, TND: TO-252D
(3) L: Lead Free, G: Halogen Free and Lead Free
(2)Package Type
(3)Green Package
MARKING
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QW-R205-031.A
2N50K-TA
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Avalanche Energy
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
RATINGS
500
±30
2 (Note 3)
8 (Note 3)
2
82
3.3
52
23
23.2
50
P
D
0.43
0.18
0.185
0.4
W/°C
W
UNIT
V
V
A
A
A
mJ
mJ
Continuous (T
C
=25°C)
Pulsed (Note 2)
Single Pulsed
Repetitive (Note 4)
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
Power Dissipation (T
C
=25°C)
Derate above 25°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Drain current limited by maximum junction temperature
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. L=41mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-251S
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
SYMBOL
RATINGS
62.5
θ
JA
110
2.36
5.5
θ
JC
5.4
2.5
°C/W
°C/W
UNIT
Junction to Ambient
Junction to Case
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QW-R205-031.A
2N50K-TA
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
5.0
4.9
V
Ω
pF
pF
pF
25
3
15
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=2A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=2A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=2A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3.0
2.6
200
39
16
12
5.6
2
20
40
84
38
2
8
1.2
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2N50K-TA
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-031.A
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