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30N06VG-TM3-T

Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size207KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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30N06VG-TM3-T Overview

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
30N06V-Q
Preliminary
Power MOSFET
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
30N06V-Q
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
* R
DS(ON)
< 40mΩ@V
GS
= 10 V, I
D
=15A
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
30N06VL-TM3-T
30N06VG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A29. a

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