UNISONIC TECHNOLOGIES CO., LTD
2SA1694
SILICON PNP EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
PNP EPITAXIAL SILICON TRANSISTOR
The UTC
2SA1694
is a silicon PNP epitaxial planar transistor, it
uses UTC’s advanced technology to provide the customers with
high DC current gain and high collector-base breakdown voltage,
etc.
The UTC
2SA1694
is suitable for audio and general purpose,
etc.
FEATURES
* High DC current gain
* High collector-base breakdown voltage
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
2SA1694L-x-T3P-T
2SA1694G-x-T3P-T
TO-3P
TO-3PN
2SA1694L-x-T3N-T
2SA1694G-x-T3N-T
Note: Pin Assignment: B: Base C: Collector E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-016.D
2SA1694
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-8
A
Base Current
I
B
-3
A
Collector Power Dissipation (T
C
=25°C)
P
C
80
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
I
CBO
I
EBO
BV
CEO
h
FE
V
CE(SAT)
f
T
C
ob
t
ON
t
S
t
F
TEST CONDITIONS
V
CB
=-120V
V
EB
=-6V
I
C
=-50mA
V
CE
=-4V, I
C
=-3A
I
C
=-3A, I
B
=-0.3A
V
CE
=-12V, I
E
=0.5A
V
CB
=-10V, f=1MHz
V
CC
=-40V, R
L
=10Ω, I
C
=-4A,
I
B1
=0.4A I
B2
=0.4A
MIN TYP MAX UNIT
-10 µA
-10 µA
-120
V
50
180
-1.5
V
20
MHz
300
pF
0.14
µS
1.40
µS
0.21
µS
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn-on time
Switching time
Storage time
Fall time
CLASSIFICATION OF h
FE
RANK
RANGE
O
50~100
P
70~140
Y
90~180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R214-016.D
2SA1694
TEST CIRCUIT
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R214-016.D
2SA1694
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
Collector Current, -I
C
(uA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Emitter Current, -I
E
(uA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, -I
C
(A)
Collector Current, -I
C
(mA)
4 of 4
QW-R214-016.D
京公网安备 11010802033920号
EEWORLD
