UNISONIC TECHNOLOGIES CO., LTD
UT2274
SWITCHING REGULATOR
APPLICATIONS
FEATURES
NPN SILICON TRANSISTOR
* High breakdown voltage (V
CBO
≥1400V).
* Ultra high-speed switching.
* Wide SOA.
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Box
Bulk
Tube
Bulk
Ordering Number
Package
Lead Free
Halogen Free
UT2274L-T92-B
UT2274G-T92-B
TO-92
UT2274L-T92-K
UT2274G-T92-K
TO-92
UT2274L-TM3-T
UT2274G-TM3-T
TO-251
UT2274L-T60-K
UT2274G-T60-K
TO-126
Note: Pin assignment: E: Emitter
B: Base
C: Collector
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UT2274
MARKING
PACKAGE
NPN SILICON TRANSISTOR
MARKING
TO-251
TO-126
TO-92
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UT2274
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
RATINGS
UNIT
1400
V
720
V
5
V
DC
1
A
Collector Current
Pulse (Note 2)
2
A
TO-251
1
W
Collector Dissipation
TO-92
P
C
625
mW
TO-126
875
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. P
W
≤300μs,
duty cycle≤10%
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE1
h
FE2
t
STG
t
F
TEST CONDITIONS
I
C
=1 mA, I
E
=0A
I
C
=5 mA, R
BE
=∞
I
E
=1 mA, I
C
=0A
V
CB
=800 V, I
E
=0A
V
CE
=1400 V, R
BE
=0Ω
V
EB
=4V, I
C
=0A
I
C
=0.25 A, I
B
=0.05 A
I
C
=0.5 A, I
B
=0.1 A
V
CE
=5V, I
C
=0.1 A
V
CE
=5V, I
C
=0.5 A
V
CC
=200V, R
L
=400Ω
I
C
=0.5A,I
B1
=0.1A,I
B2
=-0.25A,
MIN TYP MAX UNIT
1400
V
720
V
5
V
10
μA
1
mA
1
mA
1.5
V
1.5
V
15
35
4
1.5
3.0
μs
0.25 0.4
μs
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
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UT2274
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
I
B1
PW =20μs
D.C.
≤1%
Input
V
R
50Ω
+
100μF
V
BE
=-5V
+
470μF
V
CC
=200V
I
B2
R
B
Output
R
L
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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