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PMDT290UNE_15

Description
20 V, 800 mA dual N-channel Trench MOSFET
File Size158KB,16 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

PMDT290UNE_15 Overview

20 V, 800 mA dual N-channel Trench MOSFET

SO
T6
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
66
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
290
Max
20
8
800
380
Unit
V
V
mA
mΩ
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
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