UNISONIC TECHNOLOGIES CO., LTD
X1049A
HIGH GAIN TRANSISTOR
FEATURES
* V
CEV
= 80V
* High Gain
* 20 Amps pulse current
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
X1049AL-TF3-T
X1049AG-TF3-T
X1049AL-TF2-T
X1049AG-TF2-T
X1049AL-T92-B
X1049AG-T92-B
X1049AL-T92-K
X1049AG-T92-K
Package
TO-220F
TO-220F2
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
B
C
E
B
C
Packing
Tube
Tube
Tape Box
Bulk
MARKING
TO-220F / TO-220F2
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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X1049A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
80
V
25
V
5
V
DC
4
A
Collector Current
I
C
Pulse
20
A
Base Current
I
B
500
mA
TO-220F
2
Power Dissipation (T
A
=25°C)
TO-220F2
P
D
2.1
W
TO-92
1
Junction Temperature
T
J
125
°C
Operating Temperature
T
OPR
-20 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
TEST CONDITIONS
I
C
=100μA
I
C
=10mA
I
C
=100μA
I
C
=100μA, V
EB
=1V
I
E
=100μA
V
CB
=50V
V
E
B=4V
V
CES
=50V
I
C
=0.5A, I
B
=10mA
I
C
=1A, I
B
=10mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
(Note)
I
C
=2A, I
B
=10mA
I
C
=4A, I
B
=50mA
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
I
C
=4A, I
B
=50mA
Base-Emitter Turn-On Voltage (Note)
V
BE(ON)
I
C
=4A, V
CE
=2V
I
C
=10mA,
VCE
=2V
I
C
=0.5A, V
CE
=2V
DC Current Gain (Note)
h
FE
I
C
=1A, V
CE
=2V
I
C=
4A, V
CE
=2V
I
C
=20A, V
CE
=2V
Transition Frequency
f
T
I
C
=50mA, V
CE
=10V, f=50MHz
Output Capacitance
C
OBO
V
CB
=10V, f=1MHz
Turn-On Time
t
ON
I
C
=4A, I
B
=40mA, V
CC
=10V
Turn-Off Time
t
OFF
I
C
=4A, I
B
=±40mA, V
CC
=10V
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle
≤2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
SYMBOL
V
CBO
V
CEO
V
CES
V
CEV
V
EBO
I
CBO
I
EBO
I
CES
MIN
80
25
80
80
5
TYP
120
35
120
120
8.75
0.3
0.3
0.3
30
60
125
155
890
820
430
450
450
350
180
45
125
380
MAX
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
10
10
10
70
130
280
400
980
920
250
300
300
200
7
1200
60
MHz
pF
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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X1049A
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-061.E
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TYPICAL CHARACTERISTICS(Cont.)
Transient Thermal Resistance
180
160
140
120
100
80
60
40
D=0.2
D=0.1
D=0.05
0.25
D=0.5
0.50
D=1(D,C)
1.0
NPN SILICON TRANSISTOR
Power Dissipation vs. Ambient Temperature
0.75
20
Single Pulse
0
0.1ms 1ms 10ms 100ms 1s 10s 100s
Pulse Width
0.00
-40
0
40
80 120 160
Ambient Temperature (
℃
)
200
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-061.E
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