PMZ200UNE
12 March 2015
SO
T8
83
30 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 1.4 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
30
8
1.4
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
-
210
250
mΩ
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
2
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NXP Semiconductors
PMZ200UNE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
Simplified outline
1
2
Transparent
top view
3
G
Graphic symbol
D
DFN1006-3 (SOT883)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Package
Name
PMZ200UNE
DFN1006-3
Description
DFN1006-3: leadless ultra small plastic package; 3 solder lands
Version
SOT883
Type number
7. Marking
Table 4.
Marking codes
Marking code
ZV
Type number
PMZ200UNE
PMZ200UNE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 March 2015
2 / 14
NXP Semiconductors
PMZ200UNE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
Max
30
8
1.4
0.9
5
350
760
6250
150
150
150
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
[1]
[2]
T
amb
= 25 °C
[1]
-
0.7
2
A
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
P
der
(%)
80
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMZ200UNE
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 March 2015
3 / 14
NXP Semiconductors
PMZ200UNE
30 V, N-channel Trench MOSFET
10
I
D
(A)
1
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
aaa-016973
t
p
= 100 µs
t
p
= 1 ms
10
-1
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
t
p
= 10 ms
t
p
= 100 ms
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
315
145
17
Max
360
165
20
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
2
PMZ200UNE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 March 2015
4 / 14
NXP Semiconductors
PMZ200UNE
30 V, N-channel Trench MOSFET
10
3
aaa-016012
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.25
10
2
0.05
0.02
10
-2
10
-1
1
10
10
2
10
3
0
10
10
-3
0.01
t
p
(s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
aaa-016013
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.75
0.50
0.33
0.20
0.05
0.02
10
10
-3
0 0.01
10
-2
10
-1
2
0.10
0.25
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ200UNE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 March 2015
5 / 14
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