BLS7G3135LS-200
LDMOS S-band radar power transistor
Rev. 2 — 23 September 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
3100 MHz to 3500 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
3.1
3.3
3.5
V
DS
(V)
32
32
32
P
L
(W)
200
200
200
G
p
(dB)
12
12
12
D
(%)
48
46
43
t
r
(ns)
8
8
8
t
f
(ns)
6
6
6
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use (input and output)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 3100 MHz to 3500 MHz
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS7G3135LS-200 -
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
[1]
Min
-
0.5
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
C;
P
L
= 200 W
t
p
= 100
s;
= 20 %
t
p
= 200
s;
= 20 %
t
p
= 500
s;
= 20 %
0.147 K/W
0.162 K/W
0.186 K/W
Typ
Unit
transient thermal impedance from junction
to mounting base
Symbol Parameter
BLS7G3135LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2013
2 of 10
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 2.7 mA
V
DS
= 10 V;
I
D
= 270 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
51
-
2.34
0.06
Max
-
2.3
4.2
-
420
-
-
Unit
V
V
A
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 100 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
G
p
RL
in
D
t
r
t
f
Parameter
power gain
input return loss
drain efficiency
rise time
fall time
Conditions Min
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
-
-
8.8
-
38
Typ
12
8
43
0.1
8
6
Max
-
4
-
0.25
50
50
Unit
dB
dB
%
dB
ns
ns
P
droop(pulse)
pulse droop power
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G3135LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 100 mA; P
L
= 200 W; f = 3100 MHz; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
Typical impedance
Measured load pull data; V
DS
= 32 V; I
Dq
= 100 mA; typical values unless otherwise specified.
f
(MHz)
3100
3200
3300
3400
3500
Z
S
()
0.9
j4.3
1.3
j4.9
1.7
j5.5
2.4
j6.4
4.1
j6.9
Z
L
()
5.3
j1.6
4.8
j1.5
4.6
j1.9
4.0
j2.1
4.0
j2.1
BLS7G3135LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2013
3 of 10
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
Fig 1.
Definition of transistor impedance
7.3 Test circuit information
Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm. See
Table 9
for list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C4, C4, C10
C2, C5
C3, C9
C7
C8
C11
R1
[1]
[2]
[3]
[4]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Value
15 pF
10 pF
0.1
F
1
F
10
F
2200
F,
63 V
9.1
[4]
[1]
[1]
[2]
[3]
[3]
Remarks
ATC600F
ATC600F
TDK
Murata
Murata
SMD 0805
American Technical Ceramics type 600F or capacitor of same quality.
TDK or capacitor of same quality.
Murata or capacitor of same quality.
Vishay Dale or resistor of same quality.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
BLS7G3135LS-200
Product data sheet
Rev. 2 — 23 September 2013
4 of 10
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
7.4 Graphical data
V
DS
= 32 V; I
Dq
= 100 mA;
= 10 %; t
p
= 300
s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
V
DS
= 32 V; I
Dq
= 100 mA;
= 10 %; t
p
= 300
s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 3.
Output power as a function of input power;
typical values
Fig 4.
Power gain as a function of output power;
typical values
V
DS
= 32 V; I
Dq
= 100 mA;
= 10 %; t
p
= 300
s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 5.
Drain efficiency as a function of output power; typical values
BLS7G3135LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2013
5 of 10
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