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RB541VM-40

Description
Schottky Barrier Diode
File Size572KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RB541VM-40 Overview

Schottky Barrier Diode

Schottky Barrier Diode
RB541VM-40
lApplication
General rectification
lDimensions
(Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Data
Sheet
lLand
Size Figure
(Unit : mm)
0.9
0.8
(1)
1.7±0.1
1) Ultra small mold type
(UMD2)
2) High reliability
3) Super low V
F
0.3±0.05
2.5±0.2
UMD2
(2)
0.7±0.2
    0.1
lStructure
(1)
Cathode
ROHM : UMD2
JEITA : SC-90/A
JEDEC : SOD-323
: Manufacture date
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ 1.55±0.05
f1.550.05
(2)
Anode
0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
1.40±0.1
4.0±0.1
φ 1.05
f1.05
1.0±0.1
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
2.75
Limits
40
40
200
1000
125
-55
to
+125
2.8±0.1
2.1
lFeatures
Unit
V
V
mA
mA
°C
°C
resistive load
60Hz half sin wave, Non-repetitive at
T
a
=25ºC , 1cycle
Operating junction temperature
Storage temperature
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
=100mA
V
R
=40V
Min.
-
-
Typ. Max. Unit
-
-
0.61
100
V
mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A
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