DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON) max
34mΩ @ V
GS
= 4.5V
Q1
N-Channel
12V
40mΩ @ V
GS
= 2.5V
50mΩ @ V
GS
= 1.8V
70mΩ @ V
GS
= 1.5V
59mΩ @ V
GS
= -4.5V
Q2
P-Channel
-12V
81mΩ @ V
GS
= -2.5V
115mΩ @ V
GS
= -1.8V
215mΩ @ V
GS
= -1.5V
I
D MAX
T
A
= +25°C
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
•
•
•
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
S2
D2
D2
G1
D1
G2
D1
D1
D2
G1
Gate Protection
Diode
G2
S1
Gate Protection
Diode
S2
ESD PROTECTED
Pin1
S1
Bottom View
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC1030UFDB
-7
DMC1030UFDB
-13
Notes:
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
D3
Date Code Key
Year
Code
Month
Code
M
Y
2014
B
Apr
4
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
May
5
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Q1
N-CHANNEL
12
±8
5.1
4.1
6.6
5.3
2
35
Q2
P-CHANNEL
-12
±8
-3.9
-3.1
-5.0
-4.0
-1.7
-25
Units
V
V
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
1.36
1.89
92
66
18
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
12
—
—
0.4
—
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Typ
—
—
—
—
17
20
24
28
0.7
1003
132
115
11.3
12.2
23.1
1.3
1.5
4.4
7.4
18.8
4.9
7.6
0.9
Max
—
1.0
±10
1
34
40
50
70
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 4.6A
V
GS
= 2.5V, I
D
= 4.2A
V
GS
= 1.8V, I
D
= 3.8A
V
GS
= 1.5V, I
D
= 1.5A
V
GS
= 0V, I
S
= 4.8A
mΩ
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, I
D
= 6.8A
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.1Ω, R
G
= 1Ω
I
S
= 5.4A, dI/dt = 100A/μs
I
S
= 5.4A, dI/dt = 100A/μs
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
20
18
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
0
V
GS
= 0.9V
V
GS
= 1.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 1.8V
V
GS
= 2.0V
V
GS
= 1.5V
20
18
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
3
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
DS
= 5.0V
V
GS
= 3.0V
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
V
GS
= 1.5V
0.04
V
GS
= 4.5V
0.04
0.03
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
0.03
V
GS
= 18V
V
GS
= 2.5V
0.02
T
A
= 25°C
T
A
= -55°C
0.02
V
GS
= 4.5V
0.01
0.01
0
0
2
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0.00
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
V
GS
= 1.8V
I
D
= 3.0A
V
GS
= 2.5V
I
D
= 5.0A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2
0.06
0.05
0.04
V
GS
= 1.8V
I
D
= 3.0A
0.03
0.02
V
GS
= 2.5V
I
D
= 5.0A
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
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April 2014
© Diodes Incorporated
DMC1030UFDB
1
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
18
0.8
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
0.6
I
D
= 1mA
I
D
= 250µA
0.4
0.2
4
2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
f = 1MHz
8
V
GS
GATE THRESHOLD VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
6
1000
C
iss
4
V
DS
= 10V
I
D
= 6.8A
C
oss
100
C
rss
2
10
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
12
0
0
5
10
15
20
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
25
100
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
0.1
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA Safe Operation Area
100
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
4 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
Electrical Characteristics Q2 P-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
-12
—
—
-0.4
—
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Typ
—
—
—
—
37
48
69
88
-0.7
1028
285
254
19.6
13
20.8
1.8
4.5
5.6
12.8
30.7
25.4
31.6
7.8
Max
—
-1.0
±10
-1
59
81
115
215
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.1A
V
GS
= -1.8V, I
D
= -2.6A
V
GS
= -1.5V, I
D
= -0.5A
V
GS
= 0V, I
S
= -3.7A
mΩ
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -10V, I
D
= -4.7A
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
I
S
= -3.6A, dI/dt = 100A/μs
I
S
= -3.6A, dI/dt = 100A/μs
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
20
18
16
-I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
20
V
GS
= -2.0V
V
GS
= -3.0V
18
16
-I
D
, DRAIN CURRENT (A)
V
DS
= -5.0V
V
GS
= -1.8V
14
12
10
8
6
4
2
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
V
GS
= -1.5V
V
GS
= -1.0V
V
GS
= -0.9V
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
3
0
0
0.5
1
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
3
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated
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