DMC1229UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
Max
29mΩ @ V
GS
= 4.5V
34mΩ @ V
GS
= 2.5V
44mΩ @ V
GS
= 1.8V
65mΩ @ V
GS
= 1.5V
61mΩ @ V
GS
= -4.5V
81mΩ @ V
GS
= -2.5V
115mΩ @ V
GS
= -1.8V
170mΩ @ V
GS
= -1.5V
I
D
Max
T
A
= +25°C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Q1
N-Channel
12V
Q2
P-Channel
-12V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Applications
Loadswitch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
(Type B)
S2
D2
D1
D2
G1
S1
Pin1
Bottom View
G2
D1
D1
D2
G1
S1
N-CHANNEL MOSFET
G2
S2
P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC1229UFDB
-7
DMC1229UFDB
-13
Notes:
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMC1229UFDB
Document number: DS36128 Rev. 5 - 2
1 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC1229UFDB
Marking Information
D2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
D2
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
YM
2014
B
May
5
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Q1
N-Channel
12
±8
5.6
4.4
7.2
5.8
1
20
Q2
P-Channel
-12
±8
-3.8
-3.0
-5.0
-4.0
-1
-15
Units
V
V
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Note:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.
Symbol
Steady State
t<5s
Steady State
t<5s
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.4
2.2
92
55
30
-55 to +150
Units
W
°C/W
°C
DMC1229UFDB
Document number: DS36128 Rev. 5 - 2
2 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC1229UFDB
Electrical Characteristics Q1 N-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
12
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
17
20
24
30
6.5
0.6
914
132
119
1.26
10.5
19.6
1.2
1.6
5.0
10.5
16.6
4.1
Max
—
1.0
±100
1
29
34
44
65
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4.6A
V
GS
= 1.8V, I
D
= 4.1A
V
GS
= 1.5V, I
D
= 2A
V
DS
= 10V, I
D
= 5A
V
GS
= 0V, I
S
= 1A
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 6V, I
D
= 6.5A
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.2Ω, R
G
= 1Ω
Electrical Characteristics Q2 P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-12
—
—
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
37
47
63
90
5.5
-0.65
915
225
183
56.9
10.7
17.9
1.7
3.0
5.7
11.5
27.8
26.4
Max
—
-1.0
±100
-1
61
81
115
170
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.2A
V
GS
= -1.8V, I
D
= -1A
V
GS
= -1.5V, I
D
= -1A
V
DS
= -10V, I
D
= -3.6A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -6V, I
D
= -4.3A
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1229UFDB
Document number: DS36128 Rev. 5 - 2
3 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC1229UFDB
Q1 N-CHANNEL
20.0
18.0
16.0
I
D
, DRAIN CURRENT (A)
V
GS
= 8V
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 1.5V
20
V
DS
= 5.0V
18
16
I
D
, DRAIN CURRENT (A)
14.0
12.0
10.0
V
GS
= 2.5V
V
GS
= 2V
V
GS
= 1.8V
14
12
10
8
6
4
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= 125°C
T
A
= -55°C
8.0
6.0
4.0
2.0
0.0
0
1
V
GS
= 1V
V
GS
= 1.2V
2
5
0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V
GS
= 1.5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
GS
= 4.5V
T
A
= 150°C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.03
0.04
0.025
T
A
= 125°C
T
A
= 85°C
0.03
V
GS
= 1.8V
0.02
V
GS
= 2.5V
T
A
= 25°C
0.02
V
GS
= 4.5V
0.015
T
A
= -55°C
0.01
0.01
0
1
0.005
3
5
7
9 11 13 15 17 19
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
21
0
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
V
GS
= 4.5V
I
D
= 3A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 2.5V
I
D
= 3A
1.4
1.2
V
GS
= 4.5V
I
D
= 5A
V
GS
= 4.5V
I
D
= 5A
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMC1229UFDB
Document number: DS36128 Rev. 5 - 2
4 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC1229UFDB
Q1 N-CHANNEL
(Continued)
1
20
18
16
I
S
, SOURCE CURRENT (A)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.9
0.8
0.7
0.6
I
D
= 250µA
I
D
= 1mA
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
T
A
= 25°C
0.5
0.4
0.3
0.2
0.1
0
-50
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
DMC1229UFDB
Document number: DS36128 Rev. 5 - 2
5 of 9
www.diodes.com
November 2015
© Diodes Incorporated
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