DMG3418L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
30V
R
DS(ON) max
60mΩ @V
GS
= 10V
70mΩ @V
GS
= 4.5V
I
D
T
A
= +25°C
4A
3A
Features
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
ADVANCED INFORMATION
ADVANCED INFORMATION
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Drain
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
UL
Applications
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
D
Gate
Source
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMG3418L-7
DMG3418L-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
18G = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
Shanghai A/T Site
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
2014
B
May
5
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
March 2014
© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 3 - 2
1 of 5
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DMG3418L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Drain Current (Note 6)
Symbol
V
DSS
V
GSS
T
A
= +25°C
T
A
= +70°C
Pulsed
I
D
I
DM
Value
30
±12
4.0
3.1
15
Unit
V
V
A
A
ADVANCED INFORMATION
ADVANCED INFORMATION
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
T
A
= +25°C
T
A
= +70°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
1.4
0.9
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
⎯
⎯
0.5
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
25
30
50
⎯
464.3
49.5
43.8
5.5
1.1
1.8
1.9
1.6
10.3
2.0
Max
⎯
1
±100
1.5
60
70
150
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 0V, I
S
= 2.0A
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 4A
V
DD
= 15V, V
GEN
= 10V,
R
GEN
= 3Ω, R
L
= 3.75Ω
5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t
≤
10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG3418L
Document number: DS36366 Rev. 3 - 2
2 of 5
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March 2014
© Diodes Incorporated
DMG3418L
10.0
V
GS
= 10V
20
18
V
DS
= 5.0V
8.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
V
GS
= 1.5V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= -55°C
ADVANCED INFORMATION
ADVANCED INFORMATION
6.0
V
GS
= 3.5V
V
GS
= 3.0V
4.0
V
GS
= 2.5V
V
GS
= 2.0V
2.0
T
A
= 25°C
0.0
0
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
GS
= 4.5V
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1
0.08
0.07
0.06
0.05
0.04
0.03
T
A
= -55°C
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
0.1
V
GS
= 2.5V
T
A
= 25°C
V
GS
= 4.5V
0.02
0.01
0
0
8
12
16
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
V
GS
= 10V
0.01
1
3
5
7
9
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
V
GS
= 10V
I
D
= 6A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2
0.1
0.08
V
GS
= 2.5V
I
D
= 2A
V
GS
= 4.5V
I
D
= 3A
0.06
V
GS
= 4.5V
I
D
= 3A
V
GS
= 2.5V
I
D
= 2A
0.04
V
GS
= 10V
I
D
= 6A
0.02
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
0
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMG3418L
Document number: DS36366 Rev. 3 - 2
3 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMG3418L
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
18
1.6
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
75 100 125 150
-25
0
25
50
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1,000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1.2
I
D
= 1mA
ADVANCED INFORMATION
ADVANCED INFORMATION
T
A
= 25°C
0.8
I
D
= 250µA
0.4
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
V
DS
= 15V
I
D
= 4A
6
100
C
oss
C
rss
4
2
f = 1MHz
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
30
0
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
12
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
4 of 5
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DMG3418L
Document number: DS36366 Rev. 3 - 2
March 2014
© Diodes Incorporated
DMG3418L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
ADVANCED INFORMATION
ADVANCED INFORMATION
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMG3418L
Document number: DS36366 Rev. 3 - 2
5 of 5
www.diodes.com
March 2014
© Diodes Incorporated
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