TSM4424
20V N-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
20
30
11.2
Unit
V
mΩ
nC
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Specially Designed for Li-on Battery Packs
Battery Switch Application
Ordering Information
Part No.
Package
Packing
N-Channel MOSFET
TSM4424CS RL
SOP-8
2.5Kpcs / 13” Reel
TSM4424CS RLG
SOP-8
2.5Kpcs / 13” Reel
TSM4424CS RVG
SOP-8
3Kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ta = 25°C
Ta = 75°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
20
±8
8
30
2.2
2.5
1.3
+150
-55 to +150
Unit
V
V
A
A
A
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance Junction to Foot
Thermal Resistance Junction to Ambient
Symbol
R
ӨJF
R
ӨJA
Limit
25
52.5
Unit
°C/W
°C/W
1/6
Version: C14
TSM4424
20V N-Channel MOSFET
Electrical Specifications
Parameter
Static
(Note 2)
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±8V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
V
DS
=5V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 4.5A
V
GS
= 2.5V, I
D
= 3.5A
V
GS
= 1.8V, I
D
= 2.0A
V
DS
= 10V, I
D
= 6A
I
S
= 1.7A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
20
--
--
--
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.65
--
--
--
23
25
35
40
0.8
11.2
1.4
2.2
500
300
140
15
30
35
15
Max
--
1
±100
1.0
--
30
35
45
--
1.2
14
--
--
--
--
--
25
60
70
45
Unit
V
V
nA
uA
A
mΩ
S
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
(Note 3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 4)
V
DS
= 10V, I
D
= 4.5A,
V
GS
= 4.5V
nC
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
ns
Turn-Off Fall Time
t
f
Notes:
1. Pulse width limited by the maximum junction temperature
2. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
3. For DESIGN AID ONLY, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
2/6
Version: C14
TSM4424
20V N-Channel MOSFET
Electrical Characteristics Curve
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: C14
TSM4424
20V N-Channel MOSFET
Electrical Characteristics Curve
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Safety Operation Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: C14
TSM4424
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: C14
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