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TSM680P06D

Description
Dual P-Channel MOSFET
File Size423KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM680P06D Overview

Dual P-Channel MOSFET

TSM680P06D
Taiwan Semiconductor
Dual P-Channel MOSFET
-60V, -12A, 68mΩ
FEATURES
Fast switching
Low thermal resistance package
Low profile package
Pb-free plating
RoHS compliant
Halogen-free package
Q
g
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
V
GS
= -10V
V
GS
= -4.5V
VALUE
-60
68
110
16.4
nC
UNIT
V
APPLICATION
Power Supply
Motor control
PDFN56 Dual
Dual P-Channel MOSFET
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
(Note 3)
(Note 3)
LIMIT
-60
±20
-12
-8
-48
3.5
7.2
12
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
4.5
85
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000162
1
Version: A15

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