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BAT54W-B0RFG

Description
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size121KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAT54W-B0RFG Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54W/AW/CW/SW
Taiwan Semiconductor
Small Signal Product
200mW Surface Mount Schottky Barrier Diode
FEATURES
- Fast switching speed
- Low forward voltage
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Ultra high-speed swithing
- Voltage clamping
- Protection circuits
SOT-323
MECHANICAL DATA
- Case: SOT-323 small outline plastic package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 5mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak Repetitive Reverse Voltage
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current (tp=10ms)
Total Power Dissipation
Thermal Resistance form Junction Ambient
Junction Temperature
Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
I
R
=100uA
at I
F
= 0.1 mA
at I
F
= 1 mA
Forward Voltage
at I
F
= 10 mA
at I
F
= 30 mA
at I
F
= 100 mA
Reverse Current
Total Capacitance
Reverse Recovery Time
at V
R
= 25 V
V
R
=1V, f=1.0MHz
at I
F
= 10 mA through IR = 10 mA
to I
R
= 1 mA, R
L
= 100
I
R
C
T
t
rr
V
F
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
R
thjA
T
J
T
STG
SYMBOL
V
(BR)R
MIN
30
--
--
--
--
--
--
--
--
VALUE
30
30
200
300
600
200
625
125
- 55 to + 150
MAX
--
240
320
400
500
1000
2.0
10
5
uA
pF
ns
mV
UNIT
V
V
mA
mA
mA
mW
K/W
o
o
C
C
UNIT
V
Document Number: DS_S1404009
Version: C14

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