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B5818WS

Description
1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size134KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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B5818WS Overview

1 A, 30 V, SILICON, SIGNAL DIODE

B5817WS/B5818WS/B5819WS
Taiwan Semiconductor
Small Signal Product
SOD-323 20~40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-323 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 4.3mg (approximately)
SOD-323
APPLICATION
- General purpose rectification application
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
VALUE
PARAMETER
Non-Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Currect
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
PARAMETER
B5817WS
Reverse Breakdown Voltage
B5818WS
B5819WS
B5817WS
Reverse Voltage Leakage CurrentB5818WS
B5819WS
B5817WS
Forward Voltage
B5818WS
B5819WS
Diode Capacitance
at V
R
= 20 V
at V
R
= 30 V
at V
R
= 40 V
at I
F
= 1A
at I
F
= 3A
at I
F
= 1A
at I
F
= 3A
at I
F
= 1A
at I
F
= 3A
V
R
=4V, f=1.0MHz
C
D
--
V
F
I
R
at I
R
= 1 mA
V
(BR)
TEST CONDITION
SYMBOL
B5817WS
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
P
D
R
thjA
T
J
T
STG
SYMBOL
MIN
20
30
40
--
--
--
0.45
0.75
0.55
0.875
0.6
0.9
120
V
V
V
pF
Version: A14
1
mA
V
20
20
20
20
14
B5818WS
30
30
30
30
21
1
9
1.5
250
400
125
- 55 to + 150
MAX
o
UNIT
B5819WS
40
40
40
40
28
V
V
V
V
V
A
A
A
mW
C/W
o
o
C
C
UNIT
Document Number: DS_S1404015

B5818WS Related Products

B5818WS B5817WS B5817WS-M0RQG B5817WSRQG B5819WS
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