3
DIM400DDM17-A000
Replaces DS5549-4.1 June 2002
11.5
±0.2
Dual Switch IGBT Module
DS5549-5 June 2009 (LN26749)
FEATURES
±0.2
6
10µs
18
±0.2
Short Circuit Withstand
High Thermal Cycling Capability
44
±0.2
Non Punch Through Silicon
57
±0.2
Isolated AlSiC Base with AlN Substrates
Lead Free construction
6 x
O7
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
14
±0.2
28
±0.5
1700V
2.7 V
screwing depth
400A
8
max
800A
* Measured at the power busbars, not the auxiliary terminals
55.2
± 0.3
11.85
±0.2
APPLICATIONS
1(E)
5
(E)
6
(G)
2(C)
12
(C)
11
(G)
High Reliability Inverters
Motor Controllers
Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400DDM17-A000 is a dual switch 1700V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
7
(C)
3(C)
4(E)
10
(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400DDM17-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1
/
8
www.dynexsemi.com
DIM400DDM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
1700
±20
Units
V
V
A
A
W
kA s
V
pC
2
T
case
= 75°C
1ms, T
case
= 110°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 1800V, V
2
= 1300V, 50Hz RMS
400
800
3470
30
4000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
AlN
AlSiC
20mm
10mm
350
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance –
transistor (per switch)
Thermal resistance –
diode (per switch)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Storage temperature range
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
Typ.
Max
36
80
8
150
125
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
-
Mounting – M6
-40
125
5
2
10
Screw torque
Electrical connections – M4
Electrical connections – M8
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM400DDM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
Q
g
C
res
L
M
R
INT
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
1
12
2
Units
mA
mA
μA
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
A
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 400A
I
F
= 400A, T
j
= 125°C
2.2
2.3
30
4.5
-
20
270
I
1
1850
4.5
5.5
2.7
3.4
6.5
3.2
4.0
400
800
2.5
2.6
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance – per switch
Internal transistor resistance –
per switch
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125°C, V
CC
= 1000V
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
I
2
1600
A
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
/
8
www.dynexsemi.com
DIM400DDM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
F
= 400A
V
CE
= 900V
dI
F
/dt = 3000A/μs
I
C
= 400A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 4.7
R
G(OFF)
= 4.7
L
S
~ 100nH
120
250
250
150
100
230
70
mJ
ns
ns
mJ
μC
A
mJ
Test Conditions
Min
Typ.
1150
100
Max
Units
ns
ns
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
1400
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 400A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 4.7
R
G(OFF)
= 4.7
L
S
~ 100nH
130
180
400
250
170
I
F
= 400A
V
CE
= 900V
dI
F
/dt = 2500A/μs
170
270
100
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM400DDM17-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
/
8
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
