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IRFR825

Description
Zero Voltage Switiching SMPS
File Size927KB,9 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

IRFR825 Overview

Zero Voltage Switiching SMPS

IRFR825TRPBF
Applications
Zero Voltage Switching SMPS
Uninterruptible Power Supplies
Motor Control applications
V
DSS
R
DS(on)
typ.
Trr
typ.
500V
1.05Ω
92ns
I
D
6.0A
D-Pak
IRFR825TRPBF
Features and Benefits
Fast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Higher Gate voltage threshold offers improved noise
immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Max.
6.0
3.9
24
119
1.0
± 20
9.9
-55 to + 150
300 (1.6mm from case )
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Q
rr
Reverse Recovery Charge
–––
–––
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
–––
–––
–––
–––
92
152
167
292
3.6
6.0
24
1.2
138
228
251
438
5.4
V
ns
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
Units
A
W
W/°C
V
V/ns
°C
™
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
D
Ù
p-n junction diode.
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 6.0A
T
J
= 125°C, di/dt = 100A/μs
f
f
f
f
nC T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
A
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
di/dt = 100A/μs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-16
1
www.kersemi.com
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