BYT43G datasheet, PDF - EEWORLD Datasheet

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BYT43G: Description1 A, 400 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size106KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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BYT43G Overview

1 A, 400 V, SILICON, SIGNAL DIODE

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BYT43A-BYT43M

1.0A Axial Leaded Super Fast Rectifier

Features

Miniature axial leaded

Glass passivated

Hermetically sealed glass envelope

Low reverse current

High reverse voltage

DO-41

Mechanical Data

Case: Molded Plastic

Dim

Min

25.40

4.06

0.71

2.00

Max

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

@ T

= 25°C unless otherwise specified

Type

BYT43A

BYT43B

BYT43D

BYT43G

BYT43J

BYT43K

BYT43M

Symbol

RRM

Peak forward surge current

Average forward current

Junction and storage

temperature range

Parameter

Forward voltage

=8.3 ms, half sinewave

Lead length l = 10 mm,

= 25

FSM

FAV

stg

Value

100

200

400

600

800

1000

–55...+175

Typ

Max

1.6

150

Unit

Test Conditions

= 1 A

Type

BYT43A

–BYT43J

BYT43K

–BYT43M

Symbol

Min

Reverse current

Reverse breakdown voltage

RRM

, T

=150

=100

Reverse recovery time

=0.5A, I

=1A,

=0.25A

BYT43A

BYT43B

BYT43D

BYT43G

BYT43J

BYT43K

BYT43M

BYT43A

–BYT43J

BYT43K

–BYT43M

(BR)R

100

200

400

600

800

1000

1 of 2

BYT43G Related Products

	BYT43G	BYT43D	BYT43A	BYT43B	BYT43J	BYT43K	BYT43M
Description	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE

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