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BYT43K

Description
1 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size106KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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BYT43K Overview

1 A, 800 V, SILICON, SIGNAL DIODE

BYT43A-BYT43M
1.0A Axial Leaded Super Fast Rectifier
Features
·
Miniature axial leaded
·
Glass passivated
·
Hermetically sealed glass envelope
·
Low reverse current
·
High reverse voltage
D
DO-41
A
B
A
C
Mechanical Data
·
Case: Molded Plastic
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
@ T
A
= 25°C unless otherwise specified
Type
BYT43A
BYT43B
BYT43D
BYT43G
BYT43J
BYT43K
BYT43M
Symbol
V
R
=V
RRM
Peak forward surge current
Average forward current
Junction and storage
temperature range
Parameter
Forward voltage
t
p
=8.3 ms, half sinewave
Lead length l = 10 mm,
T
L
= 25
°
C
I
FSM
I
FAV
T
j
=T
stg
Value
50
100
200
400
600
800
1000
30
1
–55...+175
Typ
Max
1.6
2
5
150
Unit
V
V
V
V
V
V
V
A
A
°
C
Unit
V
V
Test Conditions
I
F
= 1 A
Type
BYT43A
–BYT43J
BYT43K
–BYT43M
Symbol
V
F
V
F
I
R
I
R
Min
Reverse current
Reverse breakdown voltage
g
V
R
=V
RRM
V
R
=V
RRM
, T
j
=150
°
C
I
R
=100
m
A
m
A
m
A
V
V
V
V
V
V
V
ns
ns
Reverse recovery time
I
F
=0.5A, I
R
=1A,
i
R
=0.25A
BYT43A
BYT43B
BYT43D
BYT43G
BYT43J
BYT43K
BYT43M
BYT43A
–BYT43J
BYT43K
–BYT43M
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
t
rr
50
100
200
400
600
800
1000
50
75
1 of 2

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BYT43K BYT43D BYT43A BYT43B BYT43G BYT43J BYT43M
Description 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
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