BYT43M datasheet, PDF - EEWORLD Datasheet

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BYT43M: Description1 A, 1000 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size106KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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BYT43M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

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BYT43A-BYT43M

1.0A Axial Leaded Super Fast Rectifier

Features

·

Miniature axial leaded

·

Glass passivated

·

Hermetically sealed glass envelope

·

Low reverse current

·

High reverse voltage

D

DO-41

A

B

A

C

Mechanical Data

·

Case: Molded Plastic

Dim

A

B

C

D

Min

25.40

4.06

0.71

2.00

Max

¾

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Parameter

Reverse voltage

g

=Repetitive peak reverse voltage

Test Conditions

@ T

A

= 25°C unless otherwise specified

Type

BYT43A

BYT43B

BYT43D

BYT43G

BYT43J

BYT43K

BYT43M

Symbol

V

R

=V

RRM

Peak forward surge current

Average forward current

Junction and storage

temperature range

Parameter

Forward voltage

t

p

=8.3 ms, half sinewave

Lead length l = 10 mm,

T

L

= 25

°

C

I

FSM

I

FAV

T

j

=T

stg

Value

50

100

200

400

600

800

1000

30

1

–55...+175

Typ

Max

1.6

2

5

150

Unit

V

A

°

C

Unit

V

Test Conditions

I

F

= 1 A

Type

BYT43A

–BYT43J

BYT43K

–BYT43M

Symbol

V

F

V

F

I

R

I

R

Min

Reverse current

Reverse breakdown voltage

g

V

R

=V

RRM

V

R

=V

RRM

, T

j

=150

°

C

I

R

=100

m

A

m

A

m

A

V

ns

Reverse recovery time

I

F

=0.5A, I

R

=1A,

i

R

=0.25A

BYT43A

BYT43B

BYT43D

BYT43G

BYT43J

BYT43K

BYT43M

BYT43A

–BYT43J

BYT43K

–BYT43M

V

(BR)R

V

(BR)R

V

(BR)R

V

(BR)R

V

(BR)R

V

(BR)R

V

(BR)R

t

rr

t

rr

50

100

200

400

600

800

1000

50

75

1 of 2

BYT43M Related Products

	BYT43M	BYT43D	BYT43A	BYT43B	BYT43G	BYT43J	BYT43K
Description	1 A, 1000 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE

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