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ES3E

Description
3 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size193KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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ES3E Overview

3 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AB

ES3A-ES3J
3.0A Surface Mount Super-Fast Rectifier
Features
·
Plastic package has underwrites laboratory flammability
Classification 94V-0
·
Glass passivated chip junction
·
Built-in strain relief,
·
Fast switching speed for high efficiency
·
High temperature soldering guaranteed:
260 C/10 seconds
A
B
SMC
Dim
A
B
C
D
E
G
H
J
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
C
Mechanical Data
·
Case: JEDED DO-214AB transfer molded plastic
·
Terminals: Solder plated, solderable per
·
MIL-STD-750, method 2026
·
Polarity: Color band denotes cathode end
·
Weight: 0.007 ounce, 0.25 gram
J
D
H
G
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
R
θJL
T
J
T
STG
45
55
17
(-55 to +150)
(-55 to +150)
0.95
ES3A
50
35
50
ES3B
100
70
100
ES3C
150
105
150
ES3D
200
140
200
3.0
100
1.25
5.0
300
35
30
1.7
ES3E
300
210
300
ES3G
400
280
400
ES3J
600
420
600
UNIT
Volts
Volts
Volts
Amps
Amps
Volts
A
nS
pF
/W
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
=100
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @ 3.0A
Maximum DC Reverse Current at rated T
A
= 25
DC Blocking Voltage per element
T
A
= 125
Typical Reverse Recovery Time
Test conditions I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on P.C.B. with
0.3”×0.3”(8.0mm
×
8.0mm) copper pad areas.
1of2

ES3E Related Products

ES3E ES3A ES3C ES3D ES3B ES3G ES3J
Description 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB MULTICOMP - ES3J - DIODE; ULTRA-FAST; 3A; 600V
state - ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE -
Diode type - rectifier diode rectifier diode rectifier diode RECTIFIER DIODE rectifier diode -

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Index Files: 199  1209  635  652  2224  4  25  13  14  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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