DATA SHEET
SEMICONDUCTOR
MBRX120WS Thru MBRX140WS
Plastic-Encapsulate
H
SOD-323
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING:
MBRX120WS: SJ
MBRX130WS:SK
MBRX140WS: SL
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal
Ambient
Resistance
Junction
to
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
θJA
T
STG
MBRX120WS MBRX130WS MBRX140WS
20
20
14
30
30
21
1
25
625
250
500
-65~+150
40
40
28
Unit
V
V
V
A
A
mA
mW
℃/W
℃
Storage temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless
Test
otherwise
specified)
MIN
20
30
40
0.1
0.45
0.75
0.55
0.875
0.6
0.9
120
MAX
UNIT
conditions
MBRX120WS
MBRX130WS
MBRX140WS
MBRX120WS
MBRX130WS
MBRX140WS
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
R
= 1mA
Reverse breakdown voltage
V
(BR)
V
R
=20V
V
R
=30V
V
R
=40V
V
Reverse voltage leakage current
I
R
mA
V
V
V
MBRX120WS
MBRX130WS
MBRX140WS
Forward voltage
V
F
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF
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