Elektronische Bauelemente
Dual Chips Common Cathode
Surface Mount Switching Diode
BAV70W
FEATURES
.
.
.
.
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
1
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
Top View
2
B S
V
ANODE
G
C
1
3
CATHODE
2
ANODE
D
H
K
J
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
IF
I
FM(surge)
Value
70
200
500
Unit
V dc
mAdc
mAdc
SOT-323(SC-70)
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina S ubstrate,(2)
A
T=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.6
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C /W
°C
R
θ
J A
PD
0.625
300
2.4
R
θ
J A
T J , Tstg
417
–55to+150
All Dimension in mm
DEVICE MARKING
B AV70W = A 4, KJA
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Revers e B reakdown Voltage
(I(
BR
) = 100 .Adc)
R evers e Voltage Leakage C urrent
(V R = 70 V dc)
(V R = 70 V dc, T J = 150°C )
Diode C apacitance
(V R = 0, f = 1.0 MHz)
F orward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
R evers e R ecovery Time
(I F = I R = 10 mAdc, I R (R E C ) = 1.0 mAdc) (F igure 1) R L = 100
F orward R ecovery T ime
(I F = 10 mAdc, t r = 20 ns ) (F igure 2)
1. FR… = 1.0 X 0.75 X 0.062 in.
5
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
V (B R )
IR
70
—
V dc
—
—
CD
VF
—
—
—
—
trr
VR F
—
—
5.0
100
1.5
uAdc
pF
mV dc
715
855
1000
1250
6.0
ns
—
1.75
V
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Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 1 of 3
Elektronische Bauelemente
Dual Chips Common Cathode
Surface Mount Switching Diode
BAV70W
BAV70
RS = 50
Ω
IF
SAMPLING
OSCILLOSCOPE
RL = 50
Ω
tr
tp
I
10%
+IF
trr
OUTPUT PULSE
VR
90%
INPUT PULSE
10% OF
VR
100
W
Figure 1. Recovery Time Equivalent Test Circuit
1 KΩ
450
Ω
RS = 50
Ω
BAV70
SAMPLING
OSCILLOSCOPE
RL = 50
Ω
I
V
90%
VFR
10%
t
tr
tp
INPUT PULSE
Figure 2.
OUTPUT PULSE
t
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Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page
2
of 3
Elektronische Bauelemente
100
IF, FORWARD CURRENT (mA)
Dual Chips Common Cathode
Surface Mount Switching Diode
BAV70W
10
TA = 855C
TA= 255 C
TA= - 405C
O
O
O
1.0
0.1
0.2
0.4
0.6
0.8
1.0
VF FORWARD VOLTAGE (VOLTS)
,
1.2
Figure 3. Forward Voltage
10
TA =1505 C
IR , REVERSE CURRENT (µA)
O
1.0
TA = 1255 C
O
0.1
TA = 855C
O
TA = 555C
0.01
TA = 255C
O
O
0.001
0
10
20
30
40
VR, REV ERSE VOLTAGE (VOLTS)
50
Figure 4. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REV ERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
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Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page
3
of
3
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