e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73378
S-50931—Rev. A, 09-May-05
www.vishay.com
1
SUU50N025-05P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
V
DS
DV
DS
/T
J
DV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
50
0.0042
0.0062
65
0.0052
0.0076
1.4
25
20
−6.0
2.4
"100
1
10
V
mV/_C
V
nA
mA
A
W
S
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 12 V, R
L
= 0.24
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 1
W
V
DD
= 12 V, R
L
= 0.24
W
I
D
^
50 A, V
GEN
= 4.5 V, R
g
= 1
W
f = 1 MHz
0.5
V
DS
= 12 V, V
GS
= 10 V, I
D
= 50 A
V
DS
= 12 V, V
GS
= 4.5 V, I
D
= 50 A
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
3600
790
430
63
30
10.5
10.5
1.0
24
13
24
7.5
11
11
29
8
1.5
36
20
36
12
17
17
44
12
ns
W
95
45
nC
pF
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 73378
S-50931—Rev. A, 09-May-05
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, di/dt = 100 A/ms, T
J
= 25_C
A
A/ms
I
S
= 30 A
0.9
34
25
17
17
T
C
= 25_C
55
100
1.5
51
38
A
V
ns
nC
ns
2
SUU50N025-05P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100
Vishay Siliconix
Output Characteristics
V
GS
= 10 thru 5 V
4V
I
D
−
Drain Current (A)
20
Transfer Characteristics
I
D
−
Drain Current (A)
80
16
60
12
40
8
T
C
= 125_C
25_C
−55_C
20
2V
0
0.0
3V
4
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
−
Drain-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
0.012
0.010
0.008
On-Resistance vs. Drain Current and Gate Voltage
4800
4000
C
−
Capacitance (pF)
3200
2400
1600
Capacitance
r
DS(on)
−
On-Resistance (mW)
C
iss
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.004
0.002
0.000
0
20
40
60
80
100
C
oss
800
0
0
C
rss
5
10
15
20
25
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
Gate Charge
1.8
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
I
D
= 20 A
V
GS
= 10 V
V
GS
= 4.5 V
8
V
DS
= 12 V
V
DS
= 18 V
4
6
2
0
0
8
16
24
32
40
48
56
64
Q
g
−
Total Gate Charge (nC)
Document Number: 73378
S-50931—Rev. A, 09-May-05
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
www.vishay.com
3
SUU50N025-05P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
100
r
DS(on)
−
Drain-to-Source On-Resistance (W)
T
J
= 150_C
0.030
0.025
0.020
0.015
0.010
0.005
T
J
= 25_C
0.000
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
I
D
= 20 A
On-Resistance vs. Gate-to-Source Voltage
10
I
S
−
Source Current (A)
1
0.1
T
J
= 25_C
0.01
T
J
= 125_C
0.001
0.00
Threshold Voltage
0.6
0.3
I
D
= 250
mA
0.0
Power (W)
V
GS(th)
(V)
−0.3
−0.6
−0.9
−1.2
−50
480
720
600
Single Pulse Power, Junction-to-Ambient
T
A
= 25_C
360
240
120
−25
0
25
50
75
100
125
150
175
0
0.001
0.01
0.1
1
Time (sec)
10
100
1000
T
J
−
Temperature (_C)
1000
Safe Operating Area, Junction-to-Case
*Limited by r
DS(on)
100
I
D
−
Drain Current (A)
10
ms
100
ms
10
1 ms
10 ms
1
T
C
= 25_C
Single Pulse
0.1
0.1
1
10
100 ms, dc
100
V
DS
−
Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
www.vishay.com
4
Document Number: 73378
S-50931—Rev. A, 09-May-05
SUU50N025-05P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100
Vishay Siliconix
Current De-Rating*
90
75
60
Power De-Rating
80
I
D
−
Drain Current (A)
60
Power
45
30
15
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
40
Package Limited
20
0
T
C
−
Case Temperature (_C)
T
C
−
Case Temperature (_C)
1000
Single Pulse Avalanche Capability
I
C
−
Peak Avalanche Current (A)
100
10
1
T
A
+
0.1
0.00001
BV
*
V
DD
L
@
I
D
0.0001
0.001
0.01
0.1
1
T
A
−
Time In Avalanche (sec)
*The power dissipation P
D
is based on T
J(max)
= 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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