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1N415G

Description
SILICON, X BAND, MIXER DIODE, DO-23
CategoryDiscrete semiconductor    diode   
File Size76KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

1N415G Overview

SILICON, X BAND, MIXER DIODE, DO-23

1N415G Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
J,E,\$,£,U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
S - X Band Point Contact Mixer Diodes
Description
IN series of Point
Contact Mixer diodes is designed for
applications from S-Band through X-
Band. Each device in this series is in a
cartridge package specially designed
for low noise figure performance.
These diodes employ epitaxial silicon
optimized for low noise figure and
wide bandwidth and are used in single
or multiple device mixer applications.
Applications
This IN series of Point Contact Mixers
is suitable for use in waveguide,
coaxial and stripline applications.
Features
• Mechanical Reliability
• Low Noise Figure
• Wide Bandwidth
Packaging
• Cartridge Style
Typical Performance
7
.01
200
300
400
500
600
FORWARD VOLTAGt
(mV)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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