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KST2484MTF

Description
Low Noise Transistor
CategoryDiscrete semiconductor    The transistor   
File Size42KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KST2484MTF Overview

Low Noise Transistor

KST2484MTF Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
KST2484
KST2484
Low Noise Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
60
60
6
50
350
150
Units
V
V
V
mA
mW
°C
Refer to KSP5088 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
Test Condition
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=45V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
I
C
=1mA, I
B
=0.1mA
I
C
=1mA, V
CE
=5V
V
CB
=5.0V, I
E
=0, f=1MHz,
I
C
=10µA, V
CE
=5V
R
S
=10KΩ, f=1KHz
250
800
0.35
0.95
6
3
V
V
pF
dB
Min.
60
60
5
10
10
Max.
Units
V
V
V
nA
nA
Marking
1U
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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