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US1J

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size222KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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SIGNAL DIODE

US1J Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode


Micro

Commercial Components
 

MCC
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
US1AE
THRU
US1ME
1 Amp Ultra Fast
Rectifier
50 to 1000 Volts
Features
Halogen
free available upon request by adding suffix "-HF"

 
Ultra Fast Switching For High Efficiency
 

 
For

Surface Mounted Applications
  
  
 
Low

Forward Voltage Drop And High Current Capability
Low Reverse Leakage Current
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Lead Free Finish/RoHS Compliant(NOTE 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
MCC
Catalog
Number
US1AE
US1BE
US1CE
US1DE
US1GE
US1JE
US1KE
US1ME
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
1.0A
30A
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
(SMAE)
H
Cathode Band
J
US1A
US1B
US1C
US1D
US1G
US1J
US1K
US1M
A
C
E
D
B
G
DIMENSIONS
INCHES
MIN
.079
.050
.002
---
.030
.189
.157
.090
MM
MIN
2.01
1.27
.05
---
.76
4.80
4.00
2.29
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
US1AE-1DE
US1GE
US1JE-1ME
T
L
=
110°C
8.3ms, half sine
DIM
A
B
C
D
E
G
H
J
MAX
.096
.075
.008
.02
.060
.208
.180
.115
MAX
2.44
1.90
.20
.51
1.52
5.30
4.57
2.92
NOTE
V
F
1.0V
1.4V
1.7V
10uA
100uA
I
FM
= 1.0A;
T
J
= 25°C
SUGGESTED SOLDER
PAD LAYOUT
0.090”
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
I
R
T
A
= 25°C
T
A
= 100°C
0.085”
US1AE-1GE
US1JE-1ME
Typical Junction
Capacitance
US1AE-1GE
US1JE-1ME
T
rr
50ns
75ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
0.070”
C
J
20pF
17pF
Measured at
1.0MHz, V
R
=4.0V
Notes:
1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7
Revision:
C
www.mccsemi.com
1 of 4
2014/01/14

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