DISCRETE SEMICONDUCTORS
M3D124
BFG480W
NPN wideband transistor
Preliminary specification
Supersedes data of 1998 Mar 06
File under Discrete Semiconductors, SC14
1998 Jul 09
Philips Semiconductors
Preliminary specification
NPN wideband transistor
FEATURES
•
High power gain
•
High efficiency
•
Low noise figure
•
High transition frequency
•
Emitter is thermal lead
•
Low feedback capacitance
•
Linear and non-linear operation.
APPLICATIONS
•
RF front end with high linearity system demands
(CDMA)
•
Common emitter class AB driver.
2
1
MSB842
BFG480W
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Top view
Marking code:
P6.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
f
T
G
max
F
G
P
η
C
PARAMETER
collector-emitter voltage open base
collector current (DC)
total power dissipation
transition frequency
maximum gain
noise figure
power gain
collector efficiency
T
s
≤
60
°C
CONDITIONS
MIN.
−
−
−
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
Pulsed; class-AB;
δ
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
Pulsed; class-AB;
δ
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
−
12
40
TYP.
−
80
−
23
16
1.8
−
−
MAX.
4.5
250
360
−
−
−
−
−
UNIT
V
mA
mW
GHz
dB
dB
dB
%
1998 Jul 09
2
Philips Semiconductors
Preliminary specification
NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
T
s
≤
60
°C;
note 1; see Fig.2
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFG480W
MAX.
14.5
4.5
1
250
360
+150
150
V
V
V
UNIT
mA
mW
°C
°C
UNIT
K/W
500
P
tot
(mW)
400
300
200
100
0
0
40
80
120
T
S
(°C)
160
Fig.2 Power derating curve.
1998 Jul 09
3
Philips Semiconductors
Preliminary specification
NPN wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
S
21
F
2
BFG480W
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
CONDITIONS
I
C
= 50
µA;
I
E
= 0
I
E
= 100
µA
V
CE
= 5 V; V
BE
= 0
I
C
= 80 mA; V
CE
= 2 V; see Fig.3
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Fig.5
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Figs 7 and 8
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Fig.8
I
C
= 8 mA; V
CE
= 2 V; f = 900 MHz;
Γ
S
=
Γ
opt
; see Fig.13
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
; see Fig.13
MIN.
14.5
4.5
1
−
40
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
60
1.4
2.3
350
23
16
12
1.2
1.8
20
28
MAX.
−
−
−
70
100
−
−
−
−
−
−
−
−
−
−
UNIT
V
V
V
nA
pF
pF
fF
GHz
dB
dB
dB
dB
dBm
dBm
collector-emitter breakdown voltage I
C
= 5 mA; I
B
= 0
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
Class-AB;
δ
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; I
CQ
= 1 mA; f = 2 GHz
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
1998 Jul 09
4
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
100
800
C
re
(pF)
h
FE
80
600
60
400
40
200
20
0
0
50
100
I
C
(mA)
150
0
0
1
2
3
4
V
CB
(V)
5
V
CE
= 2 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
30
30
gain
(dB)
MSG
G
max
S
21
f
T
(GHz)
20
20
10
10
0
10
100
I
C
(mA)
1000
0
0
40
80
120
I
C
(mA)
160
f = 2 GHz; V
CE
= 2 V; T
amb
= 25
°C.
f = 900 MHz; V
CE
= 2 V.
Fig.5
Transition frequency as a function of
collector current; typical values.
Fig.6
Gain as a function of collector current;
typical values.
1998 Jul 09
5
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