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GBPC3501W

Description
35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size344KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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GBPC3501W Overview

35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBPC35005T/W thru GBPC3504T/W
Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Integrally molded heat sink provides low thermal resistance
for maximum heat dissipation
• High surge current capability
• Universal 3-way terminals: snap on, wire-around, or P.C
board mounting
• High temperature soldering guaranteed: 260⁰C/ 10 seconds
at 5 lbs (2.3 kg) tension
• Not ESD Sensitive
V
RRM
= 50 V - 400 V
I
O
= 35 A
GBPC-T/W Package
Mechanical Data
Case: Molded plastic with heat sink integrally mounted in the bridge
encapsulation
Terminals: Either nickel plated 0.25". Faston lugs or copper leads
0.040" diameter.
Polarity: Polarrity symbols marked on the body
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
Weight: 15 grams or 0.53 ounces
Mounting torque: 20 inch-lbs max
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W
Unit
V
V
V
°C
°C
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
140
200
-55 to 150
-55 to 150
400
280
400
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Maximum average forward rectified
current
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
RMS isolation voltage from case to
leads
Symbol
I
O
I
FSM
V
F
I
R
I
2
t
V
ISO
C
j
R
ΘJC
Conditions
T
c
= 50 °C
single sine-wave
I
F
= 17.5 A
T
a
= 25 °C
T
a
= 125 °C
1 ms < t
m
< 8.3 ms
GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W
Unit
A
A
V
μA
A
2
sec
V
pF
°C/W
35.0
400
1.1
5
500
660
2500
300
1.4
35.0
400
1.1
5
500
660
2500
300
1.4
35.0
400
1.1
5
500
660
2500
300
1.4
35.0
400
1.1
5
500
660
2500
300
1.4
Typical junction capacitance
Typical thermal resistance
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1

GBPC3501W Related Products

GBPC3501W GBPC35005T GBPC35005TW GBPC35005W GBPC3502W GBPC3504W
Description 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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