|
T1N500 |
T1N200 |
T1N600 |
| Description |
Silicon Controlled Rectifier, 1000mA I(T), 500V V(DRM), |
Silicon Controlled Rectifier, 1000mA I(T), 200V V(DRM), |
Silicon Controlled Rectifier, 1600mA I(T), 600V V(DRM), |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
| Objectid |
101738077 |
101738074 |
101738078 |
| Reach Compliance Code |
unknown |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
| Nominal circuit commutation break time |
25 µs |
25 µs |
25 µs |
| Critical rise rate of minimum off-state voltage |
10 V/us |
10 V/us |
10 V/us |
| Maximum DC gate trigger current |
10 mA |
10 mA |
10 mA |
| Maximum DC gate trigger voltage |
2 V |
2 V |
2 V |
| Maximum holding current |
25 mA |
25 mA |
25 mA |
| JESD-609 code |
e0 |
e0 |
e0 |
| Maximum leakage current |
1 mA |
1 mA |
1 mA |
| On-state non-repetitive peak current |
15 A |
15 A |
15 A |
| Maximum on-state voltage |
1.9 V |
1.9 V |
1.9 V |
| Maximum on-state current |
1000 A |
1000 A |
1600 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
| Minimum operating temperature |
-45 °C |
-45 °C |
-45 °C |
| Off-state repetitive peak voltage |
500 V |
200 V |
600 V |
| surface mount |
NO |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Trigger device type |
SCR |
SCR |
SCR |