2SC3182N_2014 datasheet, PDF - EEWORLD Datasheet

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2SC3182N_2014: DescriptionSilicon NPN Power Transistors; File Size85KB，4 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2SC3182N_2014 Overview

Silicon NPN Power Transistors

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JMnic

Product Specification

Silicon NPN Power Transistors

2SC3182N

DESCRIPTION

・With

TO-3P(I) package

・Complement

to type 2SA1265N

APPLICATIONS

・Power

amplifier applications

・Recommend

for 70W high fidelity audio

frequency amplifier output stage

PINNING

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-3P(I)) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Storage temperature

=25℃

CONDITIONS

Open emitter

Open base

Open collector

VALUE

140

100

150

-55~150

UNIT

℃

2SC3182N_2014 Related Products

	2SC3182N_2014	2SC3182N_15
Description	Silicon NPN Power Transistors	Silicon NPN Power Transistors

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