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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN POWER TRANSISTORS
. COMPLEMENTARY TO THE D41D SERIES
D40D
Series
30 - 60 VOLTS
1 AMP, 6.25 WATTS
D40D is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
Features:
• High free-air power dissipation
• NPN complement to D41D PNP
• Low collector saturation voltage (0.5V typ. @ 1.0A l
c
)
• Excellent linearity
• Fast Switching
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
" [0483-CKO)
TYPE
TO-HS
TERM. 1
EMITTER
TERM !
BASE
TERM. 3
COLLECTOR
TAB
COLLECTOR
maximum ratings (T
A
=
25°C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak!
1
)
Base Current — Continuous
Total Power Dissipation @ TA = 25° C
@ T
C
= 25C
Operating and Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CES
D40D1, 2
30
45
5
D40D4, 5
45
60
5
D40D7, 8
60
75
5
VEBO
lc
ICM
IB
PD
T
J.
T
stg
1
1.5
.5
\5
.5
1
1.5
.5
UNITS
Volts
Volts
Volts
A
A
1.67
6.25
-55 to +150
1.67
6.25
-55 to +150
1.67
6.25
-55 to +150
Watts
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: '/»" from Case for 5 Seconds
(1) Pulse Test
Pulse
Width = 300ms Duty Cycle < 2%.
R0JA
75
20
75
20
75
20
RWC
T
L
+260
+260
+260
°c/w
°c/w
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goine
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (T
c
= 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
TYP
MAX
UNIT
off characteristics*
1
*
Collector-Emitter Sustaining Voltage
(l
c
= 10mA)
Collector Cutoff Current
(V
CE
= Rated VCEO)
(V
C
E =• Rated VCES)
Emitter Cutoff Current
(V
EB
= 5V)
D40D1.2
D40D4, 5
D40D7, 8
T
C
= 25° C
T
c
= 1 50° C
VCEO(sus)
30
45
60
—
1.0
—
—
—
—
Volts
'CES
0.1
pA
0.1
//A
'EBO
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 4
on characteristics
DC Current Gain
(lc = 100mA, VCE = 2V)
(IC = 1A,V
C
E = 2V)
Collector-Emitter Saturation Voltage
(l
c
= 500mA. IB = 50mA)
Base-Emitter Saturation Voltage
(lc = 500mA, I
B
= 50mA)
D40D1.4, 7
D40D2, 5, 8
D40D1.4, 7
D40D2
D40D5, 8
D40D1 , 2, 4, 5
D40D7, 8
hFE
"FE
50
120
10
20
10
—
—
150
360
—
\
—
~
E
0.5
1.0
1.5
v
CE(sat)
•
Volts
Volts
v
BE(sat)
—
dynamic characteristics
Collector Capacitance
(V
C
B = 10V, f = 1M|Hz)
~
CBO
—
—
8
200
—
—
PF
MHz
Current-Gain — Bandwidth Product
(l
c
= 20mA, VCE = 10V)
f
'
T
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
(
= 1A
,
- ,
m
= 0 1A
.
+{
t
s
l
f
—
—
—
25
200
50
—
—
—
nS
_
3QV (
^
Fall Time
______^
jlse Test PW = 300ms Duty Cycle < 2%.
(1)Pi
*00
,
»DO
~—
—•
Viwc
KK3
10
•"""
~~
1
!!"^"^s
"^~* -^^
^"v
"~~--
\*^
B«OOLM.
^
—
"N.
\e
S
j -* —
—
:
x
s >
^^
s S
'
fu
«
>
"^
5
\
N
\
\
c
-
COLLICTM CtMWN^a*
10
N
\
«
«,
FIG. 1
».
[e-eoiAieron cuM«mT-»*
-A_
„>
.
FIG. 2
Embedded System
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