IRFM250 datasheet, PDF - EEWORLD Datasheet

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IRFM250: Description27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size610KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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IRFM250 Overview

27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

IRFM250 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow

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^E.mi-dondactoi {Piodueti, -Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

IRFM250

POWER MOSFET

THRU-HOLE (TO-254AA)

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

l D @ V

S = 10V,T

= 25

Units

ID@VGS = IOV,TC = IOO°C

IDM

@ T

= 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Continuous Drain Current

27.4

Continuous Drain Current

Pulsed Drain Current 1

110

Max. Power Dissipation

150

Linear Derating Factor

1.2

w/°c

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy (?)

500

Avalanche Current ,1;

27.4

Repetitive Avalanche Energy i

15.0

Peak Diode Recovery dv/dt <D

5.0

V/ns

Operating Junction

-55 to 150

Storage Temperature Range

°C

300 ( 0.063 in. (1.6mm) from case for 10s)

Lead Temperature

Weight

9.3 (Typical)

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time or'going

to press. However, NJ

Semi-Conductors

assumes no responsibility for any errors or omissions discovered in its use.

\ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.

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