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D100NPN

Description
TWO PART BOARD CONNECTOR
Categorysemiconductor    Other integrated circuit (IC)   
File Size92KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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D100NPN Overview

TWO PART BOARD CONNECTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
C100
D100
TO-92
Plastic Package
PNP
NPN
C
BE
These are complementary transistors for medium power voltage and current amplifier
applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC Unless Specified Otherwise)
VALUE
DESCRIPTION
SYMBOL
V
CBO
60
Collector Base Voltage
V
CER
50
Collector Emitter Voltage
V
EBO
5
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-
Ambient
Thermal Resistance Junction-to-Case
I
C
P
D
T
j
, T
stg
1
500
800
-55 to +150
UNITS
V
V
V
A
mW
ºC
R
th(j-a)
R
th(j-c)
250
156.3
o
C/W
C/W
o
ELECTRICAL CHARACTERISTICS (T
a
=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CBO
I
C
=100µA,I
E
=0
Collector Base Voltage
I
C
=10mA,R
BE
=1KΩ
Collector Emitter Voltage
V
CER*
V
EBO
I
E
=100µA, I
C
=0
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I
CBO
I
EBO
h
FE*
V
CB
=40V, I
E
= 0
V
BE
=4V, I
C
= 0
V
CE
=1V, I
C
=150mA
MIN
60
50
5
MAX
UNITS
V
V
V
50
25
50
280
0.6
0.9
nA
nA
V
V
V
CE(sat)
*
I
C
=150mA, I
B
=15mA
Collector-Emitter Saturation Voltage
V
BE(on)
*
I
C
=150mA, V
CE
=1V
Base-Emitter ON Voltage
*Pulse Condition: Pulse Width < 300us, Duty Cycle < 2%.
C100_D100 Rev_1 301104D
Continental Device India Limited
Data Sheet
Page 1 of 4

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