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APT150GN60J

Description
220 A, 600 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size510KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APT150GN60J Overview

220 A, 600 V, N-CHANNEL IGBT

APT150GN60J Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeISOTOP
package instructionISOTOP-4
Contacts4
Manufacturer packaging codeISOTOP
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED, HIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)220 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate-emitter maximum voltage30 V
JESD-30 codeR-PUFM-X4
JESD-609 codee1
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)536 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)575 ns
Nominal on time (ton)154 ns
TYPICAL PERFORMANCE CURVES
®
APT150GN60J
600V
APT150GN60J
E
G
C
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
S
2
T-
O
27
ISOTOP
®
"UL Recognized"
file # E145592
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
600V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT150GN60J
UNIT
Volts
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Amps
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2400µA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
5.0
1.05
5.8
1.45
1.65
25
2
6.5
1.85
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
R
G(int)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
600
2
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7624
Rev A
11-2005
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
µA
TBD

APT150GN60J Related Products

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Description 220 A, 600 V, N-CHANNEL IGBT 35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 220 A, 600 V, N-CHANNEL IGBT 220 A, 600 V, N-CHANNEL IGBT MOSFET N-CH 500V 35A D3PAK
Shell connection ISOLATED DRAIN ISOLATED ISOLATED DRAIN
Number of components 1 1 1 1 1
Number of terminals 4 3 4 4 2
Terminal form UNSPECIFIED THROUGH-HOLE UNSPECIFIED UNSPECIFIED GULL WING
Terminal location UPPER SINGLE UPPER UPPER SINGLE
transistor applications POWER CONTROL SWITCHING POWER CONTROL POWER CONTROL SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to conform to - - conform to
Maker Microsemi Microsemi - - Microsemi
Parts packaging code ISOTOP TO-247AD - - D3PAK
package instruction ISOTOP-4 FLANGE MOUNT, R-PSFM-T3 - - SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 - - 3/2
Reach Compliance Code unknow compli - - compliant
Configuration SINGLE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE
JESD-30 code R-PUFM-X4 R-PSFM-T3 - - R-PSSO-G2
JESD-609 code e1 e1 - - e3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - - 245
Polarity/channel type N-CHANNEL N-CHANNEL - - N-CHANNEL
surface mount NO NO - - YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER - - PURE MATTE TIN
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - - 30
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