TYPICAL PERFORMANCE CURVES
®
APT150GN60J
600V
APT150GN60J
E
G
C
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
S
2
T-
O
27
ISOTOP
®
"UL Recognized"
file # E145592
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
•
600V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT150GN60J
UNIT
Volts
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Amps
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2400µA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
5.0
1.05
5.8
1.45
1.65
25
2
6.5
1.85
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
R
G(int)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
600
2
nA
Ω
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7624
Rev A
11-2005
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
µA
TBD
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT150GN60J
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
CE
= 300V
I
C
= 150A
T
J
= 175°C, R
G
= 4.3Ω
7
,
V
GE
=
15V, L = 100µH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 150A
V
GE
= 15V
MIN
TYP
MAX
UNIT
pF
V
nC
9200
350
300
9.5
970
65
510
450
44
110
430
60
8810
8615
4295
44
110
480
95
8880
9735
5460
µ
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
4
55
4
5
R
G
= 1.0Ω
7
T
J
= +25°C
Turn-on Switching Energy (Diode)
6
µ
J
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 150A
Turn-on Switching Energy (Diode)
66
T
J
= +125°C
R
G
= 1.0Ω
7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
V
Isolation
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (
50-60Hz Sinusoidal
Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT
°C/W
Volts
0.28
N/A
2500
1.03
29.2
10
1.1
oz
gm
Ib•in
N•m
Torque
Maximum Terminal & Mounting Torque
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
11-2005
Rev A
050-7624
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
350
300
T
J
= 25°C
250
T
J
= 125°C
200
150
100
50
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
GE
= 15V
400
350
I
C
, COLLECTOR CURRENT (A)
300
250
200
150
100
50
0
8V
10V
12, 13 &15V
11V
APT150GN60J
T
J
= -55°C
I
C
, COLLECTOR CURRENT (A)
T
J
= 175°C
9V
7V
FIGURE 1, Output Characteristics(T
J
= 25°C)
350
250µs PULSE
I
C
, COLLECTOR CURRENT (A)
300
250
200
150
100
50
0
0
TEST<0.5 % DUTY
CYCLE
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
12
10
8
6
4
2
0
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 150A
C
T = 25°C
J
0
5
10
15
20
25
30
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 175°C
V
CE
= 120V
V
CE
= 300V
V
CE
= 480V
2
4
6
8
10
12
14
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
200
400
600
800 1000
GATE CHARGE (nC)
FIGURE 4, Gate Charge
1200
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
C
= 300A
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
2.5
2.0
I
C
= 300A
I
C
= 150A
I
C
= 150A
I
C
= 75A
1.5
1.0
0.5
0
I
C
= 75A
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
8
25
50
75 100 125 150 175
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
0
I
C,
DC COLLECTOR CURRENT(A)
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
250
200
150
100
50
0
-50 -25
11-2005
050-7624
Rev A
0.70
-50 -25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
60
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
50
40
30
20
10
T = 25°C
,
or 125°C
J
V
CE
= 400V
600
500
400
300
200
100
0
V
CE
=
400V
R
G
=
1.0Ω
L = 100µH
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
APT150GN60J
V
GE
= 15V
110 150 190 230 270 310
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
400
350
300
250
200
150
100
50
t
f,
FALL TIME (ns)
t
r,
RISE TIME (ns)
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
1.0Ω, L
=
100
µ
H, V
CE
=
400V
0
R
G
= 1.0Ω
L = 100µH
110 150 190 230 270 310
70
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
160
140
120
100
80
60
40
20
0
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
70 110 150 190 230 270 310
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
40,000
E
ON2
, TURN ON ENERGY LOSS (µJ)
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
T
J
=
25°C
T
J
=
125°C
0
R
G
=
1.0Ω, L
=
100
µ
H, V
CE
=
400V
70 110 150 190 230 270 310
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
18,000
E
OFF
, TURN OFF ENERGY LOSS (µJ)
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
T
J
=
25°C
T
J
=
125°C
= 400V
V
CE
= +15V
V
GE
R = 1.0Ω
G
= 400V
V
CE
= +15V
V
GE
R = 1.0Ω
G
70 110 150 190 230 270 310
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
70,000
SWITCHING ENERGY LOSSES (µJ)
60,000
50,000
40,000
30,000
20,000
10,000
0
E
off,
300A
E
on2,
150A
E
on2,
75A
E
off,
75A
E
off,
150A
= 400V
V
CE
= +15V
V
GE
T = 125°C
J
70 110 150 190 230 270 310
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
40,000
SWITCHING ENERGY LOSSES (µJ)
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
E
off,
150A
E
off,
75A
E
on2,
150A
E
on2,
75A
E
off,
300A
= 400V
V
CE
= +15V
V
GE
R = 1.0Ω
G
E
on2,
300A
E
on2,
300A
Rev A
11-2005
050-7624
20
15
10
5
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
125
100
75
50
25
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
20,000
10,000
C, CAPACITANCE ( F)
500
C
ies
I
C
, COLLECTOR CURRENT (A)
500
APT150GN60J
400
P
300
100
50
C
oes
C
res
10
20
30
40
50
0
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
200
100
0
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.30
0.25
0.20
0.15
0.10
0.05
0
D = 0.9
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.7
0.5
Note:
PDM
0.3
t1
t2
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50
F
MAX
, OPERATING FREQUENCY (kHz)
RC MODEL
Junction
temp. (°C)
0.0964
Power
(watts)
0.184
Case temperature. (°C)
0.300
0.00770
10
5
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= 400V
CE
R = 1.0Ω
G
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
70 90 110 130 150 170 190
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
30
1
50
050-7624
Rev A
11-2005
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