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APT5014BLLG

Description
35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
CategoryDiscrete semiconductor    The transistor   
File Size510KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APT5014BLLG Overview

35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

APT5014BLLG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeTO-247AD
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TYPICAL PERFORMANCE CURVES
®
APT150GN60J
600V
APT150GN60J
E
G
C
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
S
2
T-
O
27
ISOTOP
®
"UL Recognized"
file # E145592
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
600V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT150GN60J
UNIT
Volts
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Amps
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2400µA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
5.0
1.05
5.8
1.45
1.65
25
2
6.5
1.85
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
R
G(int)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
600
2
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7624
Rev A
11-2005
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
µA
TBD

APT5014BLLG Related Products

APT5014BLLG APT150GN60J APT85GR120J APT85GR120L APT5014SLLG
Description 35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 220 A, 600 V, N-CHANNEL IGBT 220 A, 600 V, N-CHANNEL IGBT 220 A, 600 V, N-CHANNEL IGBT MOSFET N-CH 500V 35A D3PAK
Shell connection DRAIN ISOLATED ISOLATED ISOLATED DRAIN
Number of components 1 1 1 1 1
Number of terminals 3 4 4 4 2
Terminal form THROUGH-HOLE UNSPECIFIED UNSPECIFIED UNSPECIFIED GULL WING
Terminal location SINGLE UPPER UPPER UPPER SINGLE
transistor applications SWITCHING POWER CONTROL POWER CONTROL POWER CONTROL SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to conform to - - conform to
Maker Microsemi Microsemi - - Microsemi
Parts packaging code TO-247AD ISOTOP - - D3PAK
package instruction FLANGE MOUNT, R-PSFM-T3 ISOTOP-4 - - SMALL OUTLINE, R-PSSO-G2
Contacts 3 4 - - 3/2
Reach Compliance Code compli unknow - - compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE - - SINGLE WITH BUILT-IN DIODE
JESD-30 code R-PSFM-T3 R-PUFM-X4 - - R-PSSO-G2
JESD-609 code e1 e1 - - e3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - - 245
Polarity/channel type N-CHANNEL N-CHANNEL - - N-CHANNEL
surface mount NO NO - - YES
Terminal surface TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) - - PURE MATTE TIN
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - - 30
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